
MPC7447A RISC Microprocessor Hardware Specifications, Rev. 5
12 Freescale Semiconductor
Electrical and Thermal Characteristics
Table 6 provides the DC electrical characteristics for the MPC7447A.
Junction-to-ambient thermal resistance, 200 ft/min airflow, four-layer (2s2p) board R
θ
JMA
16 °C/W 2, 4
Junction-to-board thermal resistance R
θ
JB
10 °C/W 5
Junction-to-case thermal resistance R
θ
JC
< 0.1 °C/W 6
Notes:
1. Refer to Section 9.8, “Thermal Management Information,” for details about thermal management.
2. Junction temperature is a function of on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, airflow, power dissipation of other components on the board, and board thermal resistance.
3. Per SEMI G38-87 and JEDEC JESD51-2 with the single-layer board horizontal.
4. Per JEDEC JESD51-6 with the board horizontal.
5. Thermal resistance between the die and the printed-circuit board per JEDEC JESD51-8. Board temperature is measured on
the top surface of the board near the package.
6. This is the thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883
Method 1012.1) with the calculated case temperature. The actual value of R
θJC
for the part is less than 0.1°C/W.
Table 6. DC Electrical Specifications
At recommended operating conditions. See Table 4.
Characteristic
Nominal
Bus
Vol tag e
1
Symbol Min Max Unit Notes
Input high voltage
(all inputs)
1.8 V
IH
OV
DD
× 0.65 OV
DD
+ 0.3 V 2
2.5 1.7 OV
DD
+ 0.3
Input low voltage
(all inputs)
1.8 V
IL
–0.3 OV
DD
× 0.35 V 2, 6
2.5 –0.3 0.7
Input leakage current,
V
in
= OV
DD
V
in
= GND
—I
in
—
30
– 30
µA 2, 3
High-impedance (off-state) leakage current,
V
in
= OV
DD
V
in
= GND
—I
TSI
—
30
– 30
µA 2, 3, 4
Output high voltage @ I
OH
= –5 mA 1.8 V
OH
OV
DD
– 0.45 — V
2.5 1.8 —
Output low voltage @ I
OL
=
5 mA 1.8 V
OL
—0.45V
2.5 — 0.6
Table 5. Package Thermal Characteristics
1
(continued)
Characteristic Symbol Value Unit Notes
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